| PART |
Description |
Maker |
| APT11GP60K APT11GP60SA |
MOSFET
POWER MOS 7 IGBT
41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo...
Advanced Power Technology
MICROSEMI POWER PRODUCTS GROUP
|
| APT65GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT75GP120J |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT26GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60B APT40GP60S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT35GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT75GP120B2 |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
| APT40GP60B2DQ2G APT40GP60B2DQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technolo...
Advanced Power Technology
|
